Alternating hardmasks for tight-pitch line formation

ABSTRACT

Methods of forming fins include forming mask fins on a protection layer over a seed layer. Seed layer fins are etched out of the seed layer. Self-assembled fins are formed by directed self-assembly on the seed layer fins. A three-color hardmask fin pattern that has hardmask fins of three mutually selectively etchable compositions is formed using the self-assembled fins as a mask. A region on the three-color hardmask fin pattern is masked, leaving one or more fins of a first color exposed. All exposed fins of the first color are etched away with a selective etch that does not remove fins of a second color or a third color. The mask and all fins of a second color are etched away. Fins are etched into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.

BACKGROUND Technical Field

The present invention generally relates to semiconductor fabricationand, more particularly, to the formation of hardmasks in semiconductorfabrication processes.

Description of the Related Art

Fin field effect transistors (FinFETs) and other fin-based devices arefrequently used in semiconductor structures to provide small-scaleintegrated circuit components. As these devices scale down in size,performance can be increased but fabrication becomes more difficult. Inparticular, errors in edge placement, critical dimension, and overlayapproach the size of the structures being fabricated, making itdifficult to accurately form such structures.

One particular challenge in forming fin structures is the selectiveremoval of particular fins. For example, while a series of fins can becreated using, e.g., sidewall image transfer techniques, significanterrors in masking the fins may occur when operating near the limit ofthe lithographic process. Such errors may cause fins neighboring theremoved fin to be damaged or removed entirely.

SUMMARY

A method of forming fins include forming mask fins on a protection layerover a seed layer. Seed layer fins are etched out of the seed layer.Self-assembled fins are formed by directed self-assembly on the seedlayer fins. A three-color hardmask fin pattern that has hardmask fins ofthree mutually selectively etchable compositions is formed using theself-assembled fins as a mask. A region on the three-color hardmask finpattern is masked, leaving one or more fins of a first color exposed.All exposed fins of the first color are etched away with a selectiveetch that does not remove fins of a second color or a third color. Themask and all fins of a second color are etched away. Fins are etchedinto the fin base layer by anisotropically etching around remaining finsof the first color and fins of the third color.

A method of forming a three-color hardmask fin pattern includes formingseed layer fins by etching down through a protection layer using finmasks. Self-assembled fins are formed by directed self-assembly on theseed layer fins. A layer of a first color is etched using theself-assembled fins as a mask to form fins of a first color. Asecond-color material is deposited around the fins of the first color.Fins of the first color are etched away, leaving gaps. Fins of a thirdcolor are formed in the gaps.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The following description will provide details of preferred embodimentswith reference to the following figures wherein:

FIG. 1 is a cross-sectional diagram of a step in the formation of atri-color hardmask in accordance with one embodiment of the presentinvention;

FIG. 2 is a cross-sectional diagram of a step in the formation of atri-color hardmask in accordance with one embodiment of the presentinvention;

FIG. 3 is a cross-sectional diagram of a step in the formation of atri-color hardmask in accordance with one embodiment of the presentinvention;

FIG. 4 is a cross-sectional diagram of a step in the formation of atri-color hardmask in accordance with one embodiment of the presentinvention;

FIG. 5 is a cross-sectional diagram of a step in the formation of atri-color hardmask in accordance with one embodiment of the presentinvention;

FIG. 6 is a cross-sectional diagram of a step in the formation of atri-color hardmask in accordance with one embodiment of the presentinvention;

FIG. 7 is a cross-sectional diagram of a step in the formation of atri-color hardmask in accordance with one embodiment of the presentinvention;

FIG. 8 is a cross-sectional diagram of a step in the formation of atri-color hardmask in accordance with one embodiment of the presentinvention;

FIG. 9 is a cross-sectional diagram of a step in the formation of atri-color hardmask in accordance with one embodiment of the presentinvention;

FIG. 10 is a cross-sectional diagram of a step in the formation of atri-color hardmask in accordance with one embodiment of the presentinvention;

FIG. 11 is a cross-sectional diagram of a step in the formation of atri-color hardmask in accordance with one embodiment of the presentinvention;

FIG. 12 is a cross-sectional diagram of a step in the formation of atri-color hardmask in accordance with one embodiment of the presentinvention;

FIG. 13 is a cross-sectional diagram of a step in the formation of atri-color hardmask in accordance with one embodiment of the presentinvention;

FIG. 14 is a cross-sectional diagram of a step in the formation of atri-color hardmask in accordance with one embodiment of the presentinvention;

FIG. 15 is a cross-sectional diagram of a step in the selective etch offins using a tri-color hardmask in accordance with one embodiment of thepresent invention;

FIG. 16 is a cross-sectional diagram of a step in the selective etch offins using a tri-color hardmask in accordance with one embodiment of thepresent invention;

FIG. 17 is a cross-sectional diagram of a step in the selective etch offins using a tri-color hardmask in accordance with one embodiment of thepresent invention;

FIG. 18 is a cross-sectional diagram of a step in the selective etch offins using a tri-color hardmask in accordance with one embodiment of thepresent invention;

FIG. 19 is a cross-sectional diagram of a step in the selective etch offins using a tri-color hardmask in accordance with one embodiment of thepresent invention;

FIG. 20 is a cross-sectional diagram of a step in the selective etch offins using a tri-color hardmask in accordance with one embodiment of thepresent invention;

FIG. 21 is a block/flow diagram of a method of a forming tri-colorhardmask in accordance with one embodiment of the present invention; and

FIG. 22 is a block/flow diagram of a method of etching fins using atri-color hardmask in accordance with one embodiment of the presentinvention.

DETAILED DESCRIPTION

Embodiments of the present invention provide a hardmask fabricationprocess that may be used for fin formation in semiconductor fabrication.The present embodiment forms hardmask fins of three differentcompositions that have mutual etch selectivity, such that a spacingbetween fins of the same type is large enough that lithographic maskingerrors will not interfere when selectively removing fins. This providesa tri-color alternating hardmask, where the three different “colors”represent the three different fin hardmask composition. Thus the term“color” is defined herein to refer to one particular hardmaskcomposition.

The present disclosure therefore refers to “first-color,”“second-color,” and “third-color” materials and fins. Each of these“colors” can be etched selectively to the other two, making it possibleto remove a fin of one color without damaging nearby fins of a differentcolor.

Referring now to FIG. 1, a cross-sectional diagram of a step in formingtri-color alternating hardmask is shown. A layer of fin base material104 is formed on a semiconductor substrate 102. The semiconductorsubstrate 102 may be a bulk-semiconductor substrate. In one example, thebulk-semiconductor substrate may be a silicon-containing material.Illustrative examples of silicon-containing materials suitable for thebulk-semiconductor substrate include, but are not limited to, silicon,silicon germanium, silicon germanium carbide, silicon carbide,polysilicon, epitaxial silicon, amorphous silicon, and multi-layersthereof. Although silicon is the predominantly used semiconductormaterial in wafer fabrication, alternative semiconductor materials canbe employed, such as, but not limited to, germanium, gallium arsenide,gallium nitride, cadmium telluride, and zinc selenide. Although notdepicted in the present figures, the semiconductor substrate 102 mayalso be a semiconductor on insulator (SOI) substrate.

The fin base material 104 may be any appropriate material that may beused as a hardmask for the eventual formation of semiconductor fins inthe semiconductor substrate 102. In one embodiment, it is contemplatedthat the layer of fin base material 104 may have a thickness of about 40nm. It is specifically contemplated that silicon nitride may be used forthe fin base material 104, but it should be understood that anyappropriate hardmask material having etch selectivity with theunderlying semiconductor and the three tri-color hardmask materials maybe used. As used herein, the term “selective” in reference to a materialremoval process denotes that the rate of material removal for a firstmaterial is greater than the rate of removal for at least anothermaterial of the structure to which the material removal process is beingapplied.

A layer of first-color hardmask material 106 is formed on the fin basematerial 104. It is specifically contemplated that the first-colorhardmask material 106 may be formed from amorphous silicon, but anyappropriate hardmask material having etch selectivity with the fin basematerial 104 and the other two tri-color hardmask materials may be usedinstead. In one embodiment the layer of first-color hardmask material106 may have a thickness of about 20 nm.

A stack of layers is formed on top of the layer of first-color hardmaskmaterial 106. In particular, a first stack layer 108 is formed on thelayer of first-color hardmask material 106 and may be formed from thesame material as the fin base material 104 or any other appropriatematerial. In one embodiment the first stack layer 108 may have athickness of about 5 nm. A second stack layer 110 is formed on the firststack layer 108. It is specifically contemplated that the second stacklayer 110 may be formed from a dielectric material such as silicon boroncarbonitride (SiBCN), as this material etches slowly in hydrofluoricacid, although other dielectric materials such as silicon carbonitride(SiCN) or silicon oxycarbide (SiOC) may be used instead. The secondstack layer 110 may have a thickness of about 10 nm.

A thin seed layer of polymer material 112 is formed on the stack. It isspecifically contemplated that the seed layer 112 may be formed from,e.g., cross-linkable polystyrene, though it should be understood thatother materials may be selected instead. The seed layer 112 is selectedfor its ability to guide later self-assembly of block copolymers (BCPs).In particular, seed material should match one of the two chains of theblock copolymer system. For example, if a polystyrene/poly(methylmethacrylate) (PMMA) block copolymer is used, the seed layer 112 may becross-linkable polystyrene. If a polystyrene/polyvinylpyridine (PVP)block copolymer is used, then the seed layer 112 may be cross-linkablePVP. In one particular embodiment, the seed layer 112 may be formed to athickness between about 5 nm and about 8 nm, though it should beunderstood that greater or lesser thicknesses are also contemplated.

A protection layer 114 is formed on the stack. The protection layerensures that the surface chemistry of the seed layer 112 is preservedthrough subsequent process steps, in particular in the deposition ofspacer layers, which could otherwise consume or damage the seed layer112 if a plasma-enhanced deposition process is used. It is specificallycontemplated that homopolymer polystyrene may be used for the protectionlayer 114, since it is an uncrosslinked polystyrene that is very similarto the underlying crosslinked polystyrene. However, other possiblematerials for the protection layer 114 include, without limitation, asilicon anti-reflective coating, a titanium anti-reflective coating, ora spin-on oxide material. The thickness of the protection layer 114should be large enough to adequately protect the surface of theunderlying seed layer 112.

A layer of oxide 116 is formed on the protection layer 114. The oxidelayer 116 is used in later steps to help define sidewall image fins andmay be formed from, e.g., silicon dioxide. Mandrels 118 are then formedon the oxide layer 116. A low-temperature adhesion promotion process isused to form the mandrels 118, for example hexamethyldisilazane (HMDS)at a temperature of around 80° C. If higher temperatures are used,thermal expansion in the protection layer 114 can cause misalignment of,or damage to, the mandrels 118. In one embodiment, the mandrels 118 havea pitch of about 80 nm and may be formed by a lithography process using,e.g., 193 nm light.

Referring now to FIG. 2, a cross-sectional diagram of a step in formingtri-color alternating hardmask is shown. An additional layer of oxide202 is deposited over the mandrels 118. It is specifically contemplatedthat the additional layer of oxide 202 may be formed from the samematerial as the oxide layer 116 and may have an exemplary thickness ofabout 25 nm to about 30 nm.

Referring now to FIG. 3, a cross-sectional diagram of a step in formingtri-color alternating hardmask is shown. The additional layer of oxide202 is etched back to expose the mandrels 118 using, e.g., ananisotropic etch such as reactive ion etching (RIE). The mandrels 118are etched away using any appropriate etch including, for example, a wetor dry isotropic chemical etch. The remaining oxide layer 202/116 isfurther etched anisotropically to remove the oxide material fromhorizontal surfaces, leaving behind oxide fins 302.

RIE is a form of plasma etching in which, during etching, the surface tobe etched is placed on a radio-frequency powered electrode. Moreover,during RIE the surface to be etched takes on a potential thataccelerates the etching species extracted from plasma toward thesurface, in which the chemical etching reaction is taking place in thedirection normal to the surface. Other examples of anisotropic etchingthat can be used at this point include ion beam etching, plasma etchingor laser ablation.

Referring now to FIG. 4, a cross-sectional diagram of a step in formingtri-color alternating hardmask is shown. The fins 302 are used as a maskto etch the seed layer 112 and the protection layer 114. A directionaletch, such as RIE may be used. Remaining mask fin 302 after etch is thenstripped by solvent that keeps the seed layer portions 402 intact.Portions of the protection layer 404 remain on fins of the seed layer402.

Referring now to FIG. 5, a cross-sectional diagram of a step in formingtri-color alternating hardmask is shown. The second stack layer 110 isanisotropically etched down using the above fins as a mask. If SiBCN isused for the second stack layer 110, a dry chemical etch may be usedfollowed by, e.g., a buffered hydrofluoric acid etch to remove the oxidefins 302. The buffered hydrofluoric acid may cause the remainingportions of the protection layer 404 to collapse.

Referring now to FIG. 6, a cross-sectional diagram of a step in formingtri-color alternating hardmask is shown. The remaining portions of theprotection layer 404 are removed using an appropriate solvent. Anoptional oxygen flash may be applied before this rinse, if needed.

Referring now to FIG. 7, a cross-sectional diagram of a step in formingtri-color alternating hardmask is shown. A brush polymer layer 702 isapplied over the first stack layer 108. The brush polymer 702 may be alinear polymer with a functional group at the chain end that bonds withthe underlying substrate except material 204. Brush material 702 may bedeposited using, e.g., spin coating. Limited by only one functionalgroup per chain, a monolayer of brush is bonded to 108 and the sidewallof 502 while the excess brush can be rinsed away using solvents. Theresulting thickness of the brush polymer layer 702 depends on themolecular size of the polymer, which is typically in the range of 2-10nm. The pattern composed of 502, 402, and 702 is referred to as theguiding pattern for directed self-assembly. The brush polymer itself canbe a random copolymer of the constituents of the block copolymer. Forexample, a polymer (styrene-random-MMA)-“end group” brush can be usedfor polystyrene-PMMA block copolymers.

Referring now to FIG. 8, a cross-sectional diagram of a step in formingtri-color alternating hardmask is shown. A layer of block copolymers(BCP) is spin-coated over the guiding pattern and annealed between about200 and about 280° C. for between about 5 and 100 minutes under nitrogenenvironment to promote the self-assembly process. This directedself-assembly (DSA) process of the BCPs will result in micro-domains802, which will align to 402, 804, and 806, based on the locations ofthe remaining portions of seed layer 402. A BCP material used in thiscase is a linear polymer chain with two blocks of chemically distinctpolymers covalently bonded together. In one specific example, theself-assembling BCP material may have one block that is polystyrene,e.g., forming fins 802 and 806, and one block that is poly(methylmethacrylate) (PMMA), e.g., forming fins 804.

The lengths of the polymer chains can be selected to producemicro-domains with pitch between about 10 nm and about 200 nm. In thiscase, it is specifically contemplated that the self-assembling materialmay have halves of equal length of about 5 nm each, forming a chain witha total length of about 10 nm. When the chains self-assemble, with likeends facing one another, the resulting fins of each material are about,e.g., 10 nm in width. The resulting alternating fin configuration hasfin pitch much smaller than the original fin pitch on the guidingpattern. For example, if the mandrels 118 were formed with a fin pitchof about 80 nm, the fins of first DSA material and second DSA materialmay have a respective fin pitch of about 20 nm.

Referring now to FIG. 9, a cross-sectional diagram of a step in formingtri-color alternating hardmask is shown. The fins of second BCP block804 are removed by selective etching, leaving gaps 904 between the finsof first DSA material 802/806. The etch selectively removes the secondDSA material 804 with only partial consumption of the first DSA material802/806 and also etches down into the brush polymer layer 702, leavingremaining brush polymer 902. Depending on the etch process chosen,selectivity between 804 and 802/806 is about or greater than 2.

Referring now to FIG. 10, a cross-sectional diagram of a step in formingtri-color alternating hardmask is shown. Using the fins of first DSAmaterial 802/806 as a mask, the layer of first-color hardmask material106 is etched down. A first breakthrough etch, such as RIE,anisotropically etches the material of the first stack layer 108.Because 802/806 domains have a material-controlled, uniform dimension,any irregularities in the caps of second stack material 202 can betrimmed and rectified during the breakthrough etch. A second anisotropicetch, such as RIE, removes material from the layer of first-colorhardmask material 106, forming fins 1004 with caps of the first stackmaterial 1002. Caps of the second stack material 502 remain onalternating fins, providing fins of alternating heights.

Referring now to FIG. 11, a cross-sectional diagram of a step in formingtri-color alternating hardmask is shown. An organic planarizing layer(OPL) 1102 is deposited onto the surface and recessed down below theheight of the caps of second stack material 502 but above the height ofthe caps of first stack material 1002. In one embodiment, the OPL 1102may be formed from, e.g., spin-on carbon that forms an amorphous-likecarbon structure, but any appropriate planarization material may be usedinstead. The OPL 1102 is formed as a second-color hardmask material thathas etch selectivity with the fin base material 104, the fins offirst-color hardmask material 1004, and a third-color hardmask material.

Referring now to FIG. 12, a cross-sectional diagram of a step in formingtri-color alternating hardmask is shown. The caps of second stackmaterial 502 are removed selectively using, e.g., a buffered oxide etch,and the exposed caps of the second stack material 1002 are removed by aselective etch that leaves the OPL 1102 undamaged. Exposed fins 1004 arethen removed by a selective etch, leaving behind those fins 1004 thatare protected by the OPL 1102. Gaps 1202 remain between regions of theOPL 1102.

Referring now to FIG. 13, a cross-sectional diagram of a step in formingtri-color alternating hardmask is shown. The gaps 1202 are filled with athird-color hardmask material to form fins 1302. The third-colorhardmask material may be, for example, silicon dioxide and may bedeposited using, e.g., atomic layer deposition (ALD), spin-ondeposition, or flowable deposition. Alternatively, the third-colorhardmask material may be any appropriate material that has etchselectivity with the fins (the first-color hardmask material) 1004, theOPL (the second-color hardmask material) 1102, and the base fin material104.

Referring now to FIG. 14, a cross-sectional diagram of a step in formingtri-color alternating hardmask is shown. The OPL 1102 is recessed belowthe height of the fin caps of first stack material 1002 by chemicalmechanical planarization (CMP) or by RIE, separating the OPL 1102 intofins of second-color hardmask material 1402. The result is a series offins which can be selectively etched with respect to their neighbors. Inparticular, the fins of first-color hardmask material 1004 and the finsof third-color hardmask material 1302 have a pitch to their closestneighbor of the same material that is about half of the pitch of theoriginal mandrels 118 (e.g., about 40 nm). Thus, a mask can be reliablyformed for the removal of one fin without affecting its directneighbors.

Referring now to FIG. 15, a cross-sectional diagram of a step inselectively removing a fin is shown. A mask 1504 is formed, leavingexposed at least one fin 1502. It should be noted that the mask 1504 mayexpose neighboring fins as well, as long as those fins are not formedfrom the same material as the selected fin 1502. The mask 1504 may beformed by, e.g., chemical vapor deposition, physical vapor deposition,ALD, spin-on deposition, gas cluster ion beam (GCIB) deposition, or anyother appropriate deposition process.

CVD is a deposition process in which a deposited species is formed as aresult of chemical reaction between gaseous reactants at greater thanroom temperature (e.g., from about 25° C. about 900° C.). The solidproduct of the reaction is deposited on the surface on which a film,coating, or layer of the solid product is to be formed. Variations ofCVD processes include, but are not limited to, Atmospheric Pressure CVD(APCVD), Low Pressure CVD (LPCVD), Plasma Enhanced CVD (PECVD), andMetal-Organic CVD (MOCVD) and combinations thereof may also be employed.In alternative embodiments that use PVD, a sputtering apparatus mayinclude direct-current diode systems, radio frequency sputtering,magnetron sputtering, or ionized metal plasma sputtering. In alternativeembodiments that use ALD, chemical precursors react with the surface ofa material one at a time to deposit a thin film on the surface. Inalternative embodiments that use GCIB deposition, a high-pressure gas isallowed to expand in a vacuum, subsequently condensing into clusters.The clusters can be ionized and directed onto a surface, providing ahighly anisotropic deposition.

Referring now to FIG. 16, a cross-sectional diagram of a step inselectively removing a fin is shown. The fin 1502 is etched away usingany appropriate isotropic or anisotropic etch. Because the neighboringfin have etch selectivity with the selected fin 1502, they are notaffected by the removal of the selected fin 1502.

Referring now to FIG. 17, a cross-sectional diagram of a step inselectively preserving a fin is shown. In this example, a mask 1702 isformed over a fin of a particular color to be preserved. The other finsof the first-color hardmask material 1004 remain uncovered.

Referring now to FIG. 18, a cross-sectional diagram of a step inselectively preserving a fin is shown. Those fins 1004 that are notcovered by the mask 1702 are etched away using any appropriate etch.Because the pitch between the fins 1004 is large, there is little riskof the mask 1702 covering an unintended fin and preventing such a finfrom being removed.

Referring now to FIG. 19, a cross-sectional diagram of a step in formingsemiconductor fins is shown. The remaining mask 1702 and the fins of thesecond-color hardmask material 1402 are removed by any appropriateisotropic or anisotropic etch process. The selected fins of first-colorhardmask material 1004 and fins of third-color hardmask material 1302remain on the fin base material 104.

Referring now to FIG. 20, a cross-sectional diagram of a step in formingsemiconductor fins is shown. The remaining first-color fins 1004 andthird-color fins 1302 are used as masks to etch the fin base material104, producing a set of hardmask fins 2002. An appropriate directionaletch such as RIE may be used, stopping on the underlying semiconductorsubstrate 102. The fins 2002 may be used directly in subsequentprocessing steps or may, alternatively, be used to form further fins inthe semiconductor substrate 102 for, e.g., fin field effect transistors(FinFETs).

It is to be understood that aspects of the present invention will bedescribed in terms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials and process features andsteps can be varied within the scope of aspects of the presentinvention.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements can also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements can be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

The present embodiments can include a design for an integrated circuitchip, which can be created in a graphical computer programming language,and stored in a computer storage medium (such as a disk, tape, physicalhard drive, or virtual hard drive such as in a storage access network).If the designer does not fabricate chips or the photolithographic masksused to fabricate chips, the designer can transmit the resulting designby physical means (e.g., by providing a copy of the storage mediumstoring the design) or electronically (e.g., through the Internet) tosuch entities, directly or indirectly. The stored design is thenconverted into the appropriate format (e.g., GDSII) for the fabricationof photolithographic masks, which typically include multiple copies ofthe chip design in question that are to be formed on a wafer. Thephotolithographic masks are utilized to define areas of the wafer(and/or the layers thereon) to be etched or otherwise processed.

Methods as described herein can be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case, the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case, the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

It should also be understood that material compounds will be describedin terms of listed elements, e.g., SiGe. These compounds includedifferent proportions of the elements within the compound, e.g., SiGeincludes Si_(x)Ge_(1-x) where x is less than or equal to 1, etc. Inaddition, other elements can be included in the compound and stillfunction in accordance with the present principles. The compounds withadditional elements will be referred to herein as alloys.

Reference in the specification to “one embodiment” or “an embodiment”,as well as other variations thereof, means that a particular feature,structure, characteristic, and so forth described in connection with theembodiment is included in at least one embodiment. Thus, the appearancesof the phrase “in one embodiment” or “in an embodiment”, as well anyother variations, appearing in various places throughout thespecification are not necessarily all referring to the same embodiment.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of”, for example, in the cases of “A/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This can be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

The terminology used herein s for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises,” “comprising,” “includes” and/or “including,” when usedherein, specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of one or more other features, integers, steps, operations,elements, components and/or groups thereof.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, ca be used herein for ease of description todescribe one element's or feature's relationship to another element(s)or feature(s) as illustrated in the FIGS. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the FIGS. For example, if the device in theFIGS. is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the ter “below” can encompass both an orientation ofabove and below. The device can be otherwise oriented (rotated 90degrees or at other orientations), and the spatially relativedescriptors used herein can be interpreted accordingly. In addition, itwill also be understood that when a layer is referred to as being“between” two layers, it can be the only layer between the two layers,or one or more intervening layers can also be present.

It will be understood that, although the terms first, second, etc. canbe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another element. Thus, a first element discussed belowcould be termed a second element without departing from the scope of thepresent concept.

Referring now to FIG. 21, a method of forming three-color hardmask finsis shown. Block 2102 forms mandrels 118 on a stack of layers. The stackof layers is described in detail above with respect to FIG. 1. Block2104 conformally forms an oxide layer 202 over the mandrels 118 using,e.g., CVD, ALD, PVD, or any other appropriate deposition process. Block2106 etches back the oxide layer 202, removes the mandrels 118, andperforms an isotropic etch of the remaining oxide layer 202 to formoxide fins 302.

Block 2108 uses the oxide fins as a mask to etch down into theprotection layer 114 and the seed layer 112 with any appropriateanisotropic etch, creating seed layer fins 402. Block 2110 etches downinto second stack layer 110 before block 2112 forms a monolayer ofpolymer brush material 702 on the first stack layer 108 between the seedlayer fins 402.

Block 2114 forms alternating, self-assembled fins 802, 804, and 806 fromthe guiding pattern, using molecular chains that have one block that isattracted by the seed layer 402 and one block that sits on brushmaterial 702. Block 2116 then removes one type of the fins (particularlyfins 804) using a selective etch process. Block 2118 etches down into afirst-color hardmask material 106 to form first-color fins 1004.

Block 2120 forms second-color hardmask material (e.g., OPL 1102) in thegaps between the first-color fins 1004. Block 2122 then recesses thesecond-color hardmask material down below the height of every otherfirst-color fin, such that the second-color hardmask material has aheight below the height of half of the first-color fins 1004 and abovethe height of the other half of the first color fins 1004.

Block 2124 removes the exposed first-color fins using any appropriateetch to form gaps 1202. Block 2126 forms third-color hardmask materialin the gaps 1202. This material may be deposited by any appropriatedeposition process and then polished down using, e.g., chemicalmechanical planarization. CMP is performed using, e.g., a chemical orgranular slurry and mechanical force to gradually remove upper layers ofthe device. The slurry may be formulated to be unable to dissolve, forexample, the work function metal layer material, resulting in the CMPprocess's inability to proceed any farther than that layer.

Block 2128 recesses the second-color material below the height of allthe first-color fins 1004. The result is three sets of fins: first-colorfins 1004, second-color fins 1402, and third-color fins 1302. Each colorof fins has etch selectivity with each of the others, such thatpositioning or size errors in a mask that covers or uncovers aparticular fin are unlikely to affect neighboring fins of the samecolor.

Referring now to FIG. 22, a method of fin formation is shown. Block 2202forms a three-color hardmask fin pattern, for example in the mannerdescribed above with respect to FIG. 21. The hardmask materials of thefins are formed in the sequence of Color ABCBABCBA . . . . Block 2204forms a mask over the three-color hardmask fins, leaving one or morefins exposed. Block 2206 etches away one color of fin in the exposedarea, leaving any other color of fin that may be exposed unharmed. Block1808 removes the mask. One can repeat 2204 to 2208 multiple times toselect different colors of fins to customize before moving onto block2210, which removes all hardmask fins of one of the three colors. In theexamples above, this refers to the second-color fins 1004. Block 2212then etches down into an underlying layer (e.g., fin base material 104)to form fins of a uniform material, but with variable spacing.

Having described preferred embodiments of a system and method (which areintended to be illustrative and not limiting), it is noted thatmodifications and variations can be made by persons skilled in the artin light of the above teachings. It is therefore to be understood thatchanges may be made in the particular embodiments disclosed which arewithin the scope of the invention as outlined by the appended claims.Having thus described aspects of the invention, with the details andparticularity required by the patent laws, what is claimed and desiredprotected by Letters Patent is set forth in the appended claims.

1. A method of forming fins, comprising: masking a region on athree-color hardmask fin pattern comprising fins of three mutuallyselectively etchable compositions, leaving one or more fins of a firstcolor exposed; etching away all exposed fins of the first color with aselective etch that does not remove fins of a second color or a thirdcolor; etching away the mask and all fins of a second color; and etchingfins into a fin base layer by anisotropically etching around remainingfins of the first color and fins of the third color.
 2. The method ofclaim 1, wherein forming the mask fins comprises: forming mandrels on afirst oxide layer above the protection layer; forming a second oxidelayer conformally over the mandrels; etching back oxide anisotropicallyand etch away the mandrels; and anisotropically etching the second oxidelayer to form the mask fins.
 3. The method of claim 1, wherein formingthe three-color hardmask fin pattern comprises: forming fins of thefirst color on the fin base layer using the self-assembled fins as anetch mask; depositing a second-color material around the fins of thefirst color; etching away alternating fins of the first color, leavinggaps; and forming fins of a third color in the gaps.
 4. The method ofclaim 3, wherein the self-assembled fins comprising fins of alternatingpolymer materials.
 5. The method of claim 4, wherein forming the fins ofthe first color further comprises: etching away alternatingself-assembled fins; and etching down into a layer of first-colormaterial around the remaining self-assembled fins to form fins of afirst color, the fins of the first color having fin caps of differingheights.
 6. The method of claim 5, wherein the fin caps each compriseone or more dielectric layers, with different dielectric layerscorresponding to different heights of the fin caps of the first color.7. The method of claim 5, further comprising etching the second-colormaterial to a height lower than a height of the tallest remaining fincaps and greater than a height of the shortest remaining fin caps. 8.The method of claim 5, wherein etching away alternating fins of thefirst color comprises etching away the fins of the first color having agreater-than-average height.
 9. The method of claim 1, wherein formingself-assembled fins comprises applying a block copolymer material havingtwo molecular chains of similar or equal length, wherein one of the twomolecular chains is attracted to the seed layer.
 10. The method of claim9, wherein a first chain of the material comprises polystyrene andwherein a second chain of the material comprises poly(methylmethacrylate).
 11. (canceled)
 12. The method of claim 1, furthercomprising: masking a region on the three-color hardmask fin pattern,leaving one or more fins of the third color exposed; and etching awayall exposed fins of the third color with a selective etch that does notremove fins of the first color or the second color.
 13. A method offorming a three-color hardmask fin pattern, comprising: forming seedlayer fins by etching down through a protection layer using fin masks;forming self-assembled fins by directed self-assembly on the seed layerfins; etching a layer of a first color using the self-assembled fins asa mask to form fins of a first color; depositing a second-color materialaround the fins of the first color; etching away fins of the firstcolor, leaving at least one fin of the first color; and forming fins ofa third color in gaps left by etching away fins of the first color. 14.The method of claim 13, wherein the self-assembled fins comprisealternating base materials.
 15. The method of claim 14, furthercomprising etching away every other self-assembled fin, leavingremaining self-assembled fins having fin caps of differing heightsbefore etching the layer of the first color.
 16. The method of claim 15,wherein the fin caps each comprise one or more dielectric layers, withdifferent dielectric layers corresponding to different heights of thefin caps.
 17. The method of claim 15, wherein forming self-assembledfins comprises applying a material having two molecular chains ofsimilar or equal length, wherein one of the two molecular chains isattracted to the seed layer.
 18. The method of claim 17, wherein a firstchain of the material comprises polystyrene and wherein a second chainof the material comprises poly(methyl methacrylate).
 19. The method ofclaim 18, wherein the protection layer comprises uncrosslinkedpolystyrene and the seed layer comprises crosslinked polystyrene. 20.The method of claim 15, further comprising etching the second-colormaterial to a height lower than a height of the tallest fin cap andgreater than a height of the shortest fin cap.
 21. The method of claim1, further comprising: forming mask fins on a protection layer over aseed layer; etching seed layer fins out of the seed layer; formingself-assembled fins by directed self-assembly on the seed layer fins;and forming the three-color hardmask fin pattern using theself-assembled fins as a mask.